Patent · US Expired

Integrated circuitry

US7291895B2 · kind B2 · utility

0Cited by

18References

44Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Shane J. Trapp · Boise, US
Brian F. Lawlor · Boise, US

Key dates

Filing date	Mar 18, 2003
Grant date	Nov 6, 2007
Priority date	—
Expiry date	Oct 12, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S257/90
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A silicon nitride comprising layer formed over a semiconductor substrate includes Al, Ga or a mixture thereof. A silicon dioxide comprising layer is formed proximate thereto. The silicon dioxide comprising layer is removed substantially selectively relative to the silicon nitride comprising layer, with the Al, Ga or a mixture thereof enhancing selectivity to the silicon nitride comprising layer during the removal. A substantially undoped silicon dioxide comprising layer formed over a semiconductor substrate includes B, Al, Ga or mixtures thereof. A doped silicon dioxide comprising layer is formed proximate thereto. The doped silicon dioxide comprising layer is removed substantially selectively relative to the substantially undoped silicon dioxide comprising layer, with the B, Al, Ga or mixtures thereof enhancing selectivity to the substantially undoped silicon dioxide comprising layer during the removal. Integrated circuitry is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.