Semiconductor laser device, method for fabricating the same, and optical disk apparatus
US7292615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2004 |
| Grant date | Nov 6, 2007 |
| Priority date | — |
| Expiry date | Jul 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.