Polishing system with in-line and in-situ metrology
US7294039B2 · kind B2 · utility
9Cited by
69References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2006 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Aug 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.