Low basal plane dislocation bulk grown SiC wafers
US7294324B2 · kind B2 · utility
24Cited by
54References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Mar 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm−2 for a 4 degree off-axis wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.