Method for fabricating silicon nitride spacer structures
US7294581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2005 |
| Grant date | Nov 13, 2007 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.