Method for manufacturing capacitor of semiconductor device
US7297591B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2003 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | May 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.