Method of manufacturing a semiconductor device having a switching function
US7297596B2 · kind B2 · utility
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2References
13Claims
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Key dates
| Filing date | Oct 24, 2006 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Oct 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
Abstract
A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.