Bi-directional transistor and method therefor
US7297603B2 · kind B2 · utility
37Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Feb 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a transistor is formed to conduct current in both directions through the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.