Method for producing thin layers of semiconductor material from a donor wafer
US7297611B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Apr 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing thin layers of a semiconductor material from a donor wafer, which comprises in succession forming a first weakened region in a donor wafer below a first face and at a depth corresponding substantially to the thickness of a first thin layer to be transferred, detaching the first thin layer having upper and lower boundaries defined by the first face and the first weakened region, forming a second weakened region in the donor wafer after detachment of the first thin layer and without conducting an intermediate recycling step, with the second weakened region formed below a second face of the donor wafer and at a depth corresponding substantially to the thickness of a second thin layer to be transferred, and detaching the second thin layer having upper and lower boundaries defined by the second face and the second weakened region. Resultant semiconductor-on-insulator structures are also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.