Processing method
US7297635B2 · kind B2 · utility
14Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2002 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | Sep 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing method which, when an organic film layer such as a PR film layer 202 formed on the surface of a wafer W is to be removed from an SiO2 film layer 204 below it by generating plasma of a process gas in a chamber 1 comprises the step of using O2 gas as the process gas to remove the organic film layer at a first pressure, e.g., 20 mTorr, lower than in a conventional case, and the step of using the same O2 gas to remove the organic film layer at a second pressure, e.g., 200 mTorr, higher than the first pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.