Semiconductor method and device with mixed orientation substrate
US7298009B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 1, 2005 |
| Grant date | Nov 20, 2007 |
| Priority date | — |
| Expiry date | May 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor body having semiconductor material of a first crystal orientation. A first transistor is formed in the semiconductor material of the first crystal orientation. An insulating layer overlies portions of the semiconductor body and a semiconductor layer overlies the insulating layer. The semiconductor layer has a second crystal orientation. A second transistor is formed in the semiconductor layer having the second crystal orientation. In the preferred embodiment, the semiconductor body is (100) silicon, the first transistor is an NMOS transistor, the semiconductor layer is (110) silicon and the second transistor is a PMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.