High-rate barrier polishing composition
US7300480B2 · kind B2 · utility
6Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2003 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Sep 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.