Manufacturing method of hydrogen-doped silicon single crystal
US7300517B2 · kind B2 · utility
2Cited by
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5Claims
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Key dates
| Filing date | Aug 2, 2005 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Feb 4, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber connected to a main chamber. At least one portion of a mixed gas composed of a hydrogen gas and an inert gas to be introduced into the CZ pulling furnace is supplied directly to a surface of a silicon melt in the main chamber, preferably to adjacent parts to a solid-liquid interface of the surface thereof, or in the silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.