Use of pedestals to fabricate contact openings

US7300745B2 · kind B2 · utility

Assignee

• Promos Technologies, Inc. · TW

Inventors

• Chia-Shun Hsiao · Cupertino, US
• Chunchieh Huang · Beijing, CN
• Jin Ho Kim · Seojong-myeon, KR
• Kuei-Chang Tsai · Cupertino, US
• Barbara Haselden · Cupertino, US
• Daniel Wang · San Jose, US

Key dates

• Filing date: Feb 4, 2004
• Grant date: Nov 27, 2007
• Expiry date: Mar 3, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

Nonvolatile memory wordlines (160) are formed as sidewall spacers on sidewalls of control gate structures (280). Each control gate structure may contain floating and control gates (120, 140), or some other elements. Pedestals (340) are formed adjacent to the control gate structures before the conductive layer (160) for the wordlines is deposited. The pedestals will facilitate formation of the contact openings (330.1) that will be etched in an overlying dielectric (310) to form contacts to the wordlines. The pedestals can be dummy structures. A pedestal can physically contact two wordlines.