Integrated barrier and seed layer for copper interconnect technology
US7300869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2004 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Aug 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated barrier and seed layer that is useful for creating conductive pathways in semiconductor devices. The barrier portion of the integrated layer prevents diffusion of the conductive material into the underlying dielectric substrate while the seed portion provides an appropriate foundation upon which to deposit the conductive material. The barrier portion of the integrated layer is formed of a metal nitride, while the seed portion is formed of ruthenium or a ruthenium alloy. The metal nitride forms an effective barrier layer while the ruthenium or ruthenium alloy forms an effective seed layer for a metal such as copper. In some embodiments, the integrated layer is formed in a way so that its composition changes gradually from one region to the next.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.