Film formation apparatus and method for semiconductor process
US7300885B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2005 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Jul 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.