High-reliable semiconductor device using hermetic sealing of electrodes
US7301243B2 · kind B2 · utility
4Cited by
12References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 29, 2005 |
| Grant date | Nov 27, 2007 |
| Priority date | — |
| Expiry date | Nov 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a high-reliable semiconductor device in which electrodes formed on substrates are prevented from deteriorating by sealing the electrodes with a frame member rather than a sealing material. The frame member in the present invention surrounds electrodes formed on the substrates. The inside of the frame member is vacuous or filled with a gas which does not react with the electrodes such as an inert gas and, thereby, the electrodes are prevented from deteriorating by attacks of oxygen or moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.