Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit

US7301741B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Michael G. Khazhinsky · Austin, US
• Leo Mathew · Austin, US

Key dates

• Filing date: May 17, 2005
• Grant date: Nov 27, 2007
• Expiry date: May 25, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6215

Abstract

A rail clamp circuit (100) includes first and second power supply voltage rails, a multiple independent gate field effect transistor (MIGFET) (128), and an ESD event detector circuit (138). The MIGFET (128) has a source/drain path coupled between the first (112) and second (114) power supply voltage rails, and first and second gates. The ESD event detector circuit (138) is coupled between the first (112) and second (114) power supply voltage rails, and has first and second output terminals respectively coupled to the first and second gates of the MIGFET. In response to an electrostatic discharge (ESD) event between the first (112) and second (114) power supply voltage rails, the ESD event detector circuit (138) provides a voltage to the second gate to lower an absolute threshold voltage of the MIGFET (128) while providing a voltage to the first gate above the absolute threshold voltage so lowered, thereby making the MIGFET (128) conductive with relatively high conductivity.