Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask

US7301752B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Ebenezer E. Eshun · South Burlington, US
• Natalie B. Feilchenfeld · Jericho, US
• Michael L. Gautsch · Jericho, US
• Zhong-Xiang He · South Burlington, US
• Matthew D. Moon · Jeffersonville, US
• Vidhya Ramachandran · Cupertino, US
• Barbara Waterhouse · South Burlington, US

Key dates

• Filing date: Jun 4, 2004
• Grant date: Nov 27, 2007
• Expiry date: Jan 7, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and the dielectric layer, and forms a hardmask (silicon oxide hardmask, a silicon nitride hardmask, etc.) over the etch stop layer. Next, a photoresist is patterned above the hardmask, which allows the hardmask, the etch stop layer, the dielectric layer, and the lower conductor layer to be etched through the photoresist.