Electro- and electroless plating of metal in the manufacture of PCRAM devices
US7303939B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 9, 2003 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resistance variable material, and then plating a conductive material to a desired thickness to form a second (upper) electrode. In another embodiment, the surface of the chalcogenide layer can be treated with an activating agent such as palladium, a conductive metal can be electrolessly plated onto the activated areas to form a thin diffusion layer, metal ions from the diffusion layer can be diffused into the chalogenide material to form a resistance variable material, and a conductive material plated over the resistance variable material to form the upper electrode. The invention provides a process for controlling the diffusion of metal into the chalcogenide material to form a resistance variable…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.