Method of fabricating dielectric mixed layers and capacitive element and use thereof

US7303970B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Harald Seidl · Brandenburg an der Havel, DE

Key dates

• Filing date: May 10, 2005
• Grant date: Dec 4, 2007
• Expiry date: May 10, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/022
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a method for fabricating a capacitive element (100), a substrate (101) being provided as a first electrode layer of the capacitive element (100), the substrate (101) provided as an electrode layer is conditioned, a dielectric layer (102) is deposited on the conditioned substrate (101) and a second electrode layer (104) is applied on the layer stack produced, the layer stack being modified by a heat treatment in such a way that the dielectric layer (102) deposited on the conditioned substrate (101) forms a dielectric mixed layer (105) with a reaction layer (103) deposited on the dielectric layer (102), which dielectric mixed layer has an increased dielectric constant (k) or an increased thermal stability.