Embossed mask lithography
US7304364B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2004 |
| Grant date | Dec 4, 2007 |
| Priority date | — |
| Expiry date | Jan 28, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are layered groupings and methods for constructing digital circuitry, such as memory known as Permanent Inexpensive Rugged Memory (PIRM) cross point arrays which can be produced on flexible substrates by patterning and curing through the use of a transparent embossing tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.