Interferometric endpoint determination in a substrate etching process
US7306696B2 · kind B2 · utility
25Cited by
7References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2002 |
| Grant date | Dec 11, 2007 |
| Priority date | — |
| Expiry date | Nov 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32963
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.