Lei Lian
33Patents
7h-index
39Co-inventors
69Inventor score
Filing activity: Nov 1, 2002 → Mar 25, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7169625B2 | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring | Electricity | 61 | Expired |
| US7306696B2 | Interferometric endpoint determination in a substrate etching process | Electricity | 25 | Expired |
| US8257546B2 | Method and system for monitoring an etch process | Electricity | 18 | Active |
| US9200950B2 | Pulsed plasma monitoring using optical sensor and a signal analyzer forming a mean waveform | Physics | 15 | Active |
| US7652774B2 | Interferometric endpoint determination in a substrate etching process | Electricity | 14 | Active |
| US7158221B2 | Method and apparatus for performing limited area spectral analysis | Electricity | 11 | Expired |
| US11114286B2 | In-situ optical chamber surface and process sensor | Electricity | 9 | Active |
| US8009938B2 | Advanced process sensing and control using near infrared spectral reflectometry | Physics | 7 | Active |
| US8232212B2 | Within-sequence metrology based process tuning for adaptive self-aligned double patterning | Electricity | 7 | Active |
| US7330244B2 | Method and apparatus for performing limited area spectral analysis | Electricity | 4 | Active |
| US9601396B2 | 3D NAND staircase CD control by using interferometric endpoint detection | Electricity | 4 | Active |
| US11421977B2 | Eliminating internal reflections in an interferometric endpoint detection system | Electricity | 3 | Active |
| US7695987B2 | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring | Electricity | 3 | Active |
| US7808651B2 | Determining endpoint in a substrate process | Electricity | 3 | Active |
| US9240359B2 | 3D NAND staircase CD control by using interferometric endpoint detection | Electricity | 2 | Active |
| US7969581B2 | Determining endpoint in a substrate process | Electricity | 2 | Active |
| US8956886B2 | Embedded test structure for trimming process control | Electricity | 2 | Active |
| US7815812B2 | Method for controlling a process for fabricating integrated devices | Emerging Cross-Sectional Technologies | 2 | Active |
| US8274645B2 | Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber | Physics | 2 | Active |
| US11709477B2 | Autonomous substrate processing system | Physics | 2 | Active |
| US7602484B2 | Method and apparatus for performing limited area spectral analysis | Electricity | 1 | Active |
| US7393459B2 | Method for automatic determination of substrates states in plasma processing chambers | Physics | 1 | Expired |
| US11719952B2 | Adjustable achromatic collimator assembly for endpoint detection systems | Physics | 1 | Active |
| US8130382B2 | Determining endpoint in a substrate process | Electricity | 1 | Active |
| US12265377B2 | Autonomous substrate processing system | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.