Semiconductor device with temperature sensor

US7307328B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thorsten Meyer · Regensburg, DE
• Norbert Krischke · Munich, DE
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Sep 30, 2005
• Grant date: Dec 11, 2007
• Expiry date: Sep 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor and a bipolar transistor. The MOS transistor is integrated into the semiconductor body nd configured such that the substhreshold current intensity of the MOS transistor is proportional to the temperature to be measured. The subthreshold current of the MOS transistor is amplified by the bipolar transistor.