Patent · US Expired

Method for determining the depth of a buried structure

US7307735B2 · kind B2 · utility

13Cited by

12References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Hecht · Dresden, DE
Uwe Schroder · Dresden, DE
Ulrich Mantz · Heroldstatt, DE
Stefan Jakschik · Kessel-Lo, BE
Andreas Orth · Friedrichsdorf, DE

Key dates

Filing date	Apr 30, 2004
Grant date	Dec 11, 2007
Priority date	—
Expiry date	Oct 28, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG01J3/453
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.