Substrate processing method
US7309449B2 · kind B2 · utility
1Cited by
10References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2004 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Mar 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.