Electron beam modification of CVD deposited films, forming low dielectric constant materials
US7309514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Dec 18, 2007 |
| Priority date | — |
| Expiry date | Mar 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.