Low 1c screw dislocation 3 inch silicon carbide wafer
US7314520B2 · kind B2 · utility
33Cited by
19References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2004 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | May 24, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.