Method to make corner cross-grid structures in copper metallization
US7314811B2 · kind B2 · utility
12Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2004 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | Jun 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method to prevent cracking at the corners of a semiconductor die during dicing is described. Dummy metal structures are fabricated at the corners of the die to prevent cracking. The design for the dummy metal structures can be generated automatically by a computer program.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.