Nitrogen-free ARC/capping layer and method of manufacturing the same

US7314824B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Kai Frohberg · Meißen, DE
• Sven Muehle · Dresden, DE
• Hartmut Ruelke · Dresden, DE

Key dates

• Filing date: Apr 22, 2005
• Grant date: Jan 1, 2008
• Expiry date: Apr 18, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover, the ARC/capping layer is directly formed on the low-k material, thereby also preserving the integrity thereof during an etch and chemical mechanical polishing process.