Magnetoresistive effect element and magnetic memory device
US7315053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2003 |
| Grant date | Jan 1, 2008 |
| Priority date | — |
| Expiry date | May 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0<c≦35, 10≦d≦30. a+b+C+d=100).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.