Apparatus for uniformly etching a dielectric layer
US7316761B2 · kind B2 · utility
162Cited by
40References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 3, 2003 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Dec 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.