Patent · US Expired

Method for producing an annular microstructure element

US7316933B2 · kind B2 · utility

1Cited by

10References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alfred Kersch · Putzbrunn, DE
Wolfgang Raberg · Sauerlach, DE
Siegfried Schwarzl · Neubiberg, DE

Key dates

Filing date	Apr 22, 2005
Grant date	Jan 8, 2008
Priority date	—
Expiry date	Apr 22, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/265
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (α) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.