Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
US7316965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and said sidewall of said handle layer (138) to thereby electrically couple said handle layer (108) to said cap (132). A wafer-level method for manufacturing the MEMS device from a substrate (300) comprising a handle layer (108) and a cap (132) overlying the handle layer (108) is also provided. The method includes making a first cut through the cap (132) and at least a portion of the substrate (300) to form a first sidewall (138), and depositing a conductive material (136) onto the first sidewall (138) to electrically couple the cap (132) to the substrate (300).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.