Method of producing a microelectronic electrode structure, and microelectronic electrode structure

US7317201B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Harald Seidl · Brandenburg an der Havel, DE

Key dates

• Filing date: Dec 7, 2005
• Grant date: Jan 8, 2008
• Expiry date: Mar 10, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

In a method for producing a microelectronic electrode structure a first wiring plane is prepared, an insulating region on the first wiring plane is provided, a through-hole in the insulating region is formed, a ring electrode in the through-hole is formed, and a second wiring plane is formed on the insulating region. The ring electrode comprises a first side and a second side, the ring electrode is electrically connected on the first side to the first wiring plane, and the second wiring plane is electrically connected to the second side of the ring electrode.