Gate electrode structures and methods of manufacture
US7317229B2 · kind B2 · utility
18Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2005 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Jan 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the methods and structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.