Redundant interconnect high current bipolar device and method of forming the device
US7317240B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2005 |
| Grant date | Jan 8, 2008 |
| Priority date | — |
| Expiry date | Feb 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device. The device includes two bipolar transistors electrically connected to each other. Each bipolar transistor of the two bipolar transistors may include a base contact and an emitter contact surrounding the base contact, wherein the emitters contacts of the two bipolar transistor are in electrical contact with each other. A first bipolar transistor of the two bipolar transistors may have a first wiring stack and a second bipolar transistor two bipolar transistors may have a second wiring stack, wherein the second wiring stack includes at least one more wiring level than the first wiring stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.