Semiconductor-on-insulator chip with<100>-oriented transistors

US7319258B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Fu-Liang Yang · Baoshan, TW
• Yee-Chia Yeo · Baoshan, TW
• Hung-Wei Chen · Zhubei City, TW
• Tim Tsao · Baoshan, TW
• Chenming Hu · Alamo, US

Key dates

• Filing date: Jul 28, 2004
• Grant date: Jan 15, 2008
• Expiry date: Mar 28, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor-on-insulator device includes a silicon active layer with a <100> crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a <110> crystal direction. Transistors oriented on a <100> direction are formed on the silicon active layer.