Process for growing silicon single crystal and process for producing silicon wafer
US7320731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2006 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Jul 17, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a silicon single crystal is characterized by using an atmospheric gas for growing a single crystal which is a hydrogen-containing gas which contains a hydrogen-containing substance, and pulling the silicon single crystal at a pulling rate ranging from a value with which the ratio (a/b) of the diameter (b) of the silicon single crystal and the outer diameter (a) of a ring which consists of the OSF-generating region in the radial direction of the silicon single crystal is not higher than 0.77 to another value with which the OSF-generating region disappears at the center part of the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.