Semiconductor integrated circuit device
US7321171B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2004 |
| Grant date | Jan 22, 2008 |
| Priority date | — |
| Expiry date | Oct 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.