One hundred millimeter single crystal silicon carbide wafer

US7323051B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Hudson M. Hobgood · Pittsboro, US
• Jason Jenny · Raleigh, US
• David Phillip Malta · Raleigh, US
• Valeri F. Tsvetkov · Durham, US
• Calvin H. Carter, Jr. · Cary, US
• Robert Tyler Leonard · Raleigh, US
• George J. Fechko, Jr. · Pittsburgh, US

Key dates

• Filing date: Oct 12, 2005
• Grant date: Jan 29, 2008
• Expiry date: Feb 23, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.