Apparatus and method for the production of bulk silicon carbide single crystals
US7323052B2 · kind B2 · utility
6Cited by
7References
27Claims
0Family size
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Key dates
| Filing date | Mar 24, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Sep 22, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/102
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the selective passage of atomic silicon vapor species while minimizing the concurrent passage of other vapor phase species. The apparatus can provide control of vapor phase stoichiometry within the sublimation chamber, which in turn can allow the production of bulk silicon carbide single crystals with reduced intrinsic point defects concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.