Method of forming a FINFET structure

US7323389B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Sinan Goktepeli · San Diego, US
• Voon-Yew Thean · Fishkill, US

Key dates

• Filing date: Jul 27, 2005
• Grant date: Jan 29, 2008
• Expiry date: Aug 2, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0241

Abstract

A semiconductor device (10) such as a FinFET transistor of small dimensions is formed in a process that permits substantially uniform ion implanting (32) of a source (14) electrode and a drain (16) electrode adjacent to an intervening gate (18) and channel (23) connected via source/drain extensions (22, 24) which form a fin. At small dimensions, ion implanting may cause irreparable crystal damage to any thin areas of silicon such as the fin area. To permit a high concentration/low resistance source/drain extension, a sacrificial doping layer (28, 30) is formed on the sides of the fin area. Dopants from the sacrificial doping layer are diffused into the source electrode and the drain electrode using heat. Subsequently a substantial portion, or all, of the sacrificial doping layer is removed from the fin.