Method of layer transfer comprising sequential implantations of atomic species
US7323398B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Apr 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate detachment of a first layer of the donor substrate from a remaining portion of the donor substrate. The first layer and remaining portion are disposed on opposite sides of the region of weakness. The method also includes implanting second atomic species in the donor substrate to form a gettering region at a second depth therein that is different than the first depth to reduce or minimize migration of the implanted first atomic species past the gettering region. This reduces or minimizes an increase in roughness of a surface produced on the first layer after detachment thereof from the remaining portion at the region of weakness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.