Dry etchback of interconnect contacts
US7323410B2 · kind B2 · utility
2Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2005 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Dec 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.