Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits
US7323736B2 · kind B2 · utility
2Cited by
5References
44Claims
0Family size
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Key dates
| Filing date | May 22, 2006 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | May 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method of provided for forming in one plane layers of semiconductor material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.