Phase change memory fabricated using self-aligned processing

US7324365B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ulrike Gruening-von Schwerin · Munich, DE
• Thomas Happ · Tarrytown, US

Key dates

• Filing date: Mar 2, 2006
• Grant date: Jan 29, 2008
• Expiry date: Mar 2, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A memory includes transistors in rows and columns providing an array, conductive lines in columns across the array, and phase change elements contacting the conductive lines and self-aligned to the conductive lines. The memory includes bottom electrodes contacting the phase change elements, each bottom electrode self-aligned to a conductive line and coupled to one side of a source-drain path of a transistor.