Method and apparatus for verifying the post-optical proximity corrected mask wafer image sensitivity to reticle manufacturing errors
US7325222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Jan 29, 2008 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for verifying reticle enhancement technique latent image sensitivity to mask manufacturing errors. The method includes the steps of revising a polygon based on mask CD distributions to provide a virtual mask, imaging the virtual mask to obtain response function statistical parameters, and comparing the statistical parameters to process tolerance requirements. Preferably, the method includes the steps of simulating an aerial and/or latent image of the virtual mask, calculating response functions based on the mask image simulation, collecting measurements and calculating statistical parameters based on the response functions, and comparing the statistical parameters with design rule requirements (i.e., for DI yield percentage for required mask manufacturing specification). The virtual mask is obtained by using mask CD distribution to induce statistical variations to layouts which have passed through the conventional OPC procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.