Patent · US Expired

Nitrogen-free ARC layer and a method of manufacturing the same

US7326646B2 · kind B2 · utility

3Cited by

5References

27Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Hartmut Ruelke · Dresden, DE
Katja Huy · Dresden, DE
Sven Muehle · Dresden, DE

Key dates

Filing date	Jan 13, 2005
Grant date	Feb 5, 2008
Priority date	—
Expiry date	Nov 25, 2025

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/952
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention provides a nitrogen-free ARC layer, which is formed on the basis of silane and carbon dioxide by PECVD in a nitrogen-free deposition atmosphere. The optical characteristics may be tuned in a wide range, wherein, in particular, a back reflection into the resist is maintained at 3% or less. The ARC layer is well suited for 193 nm lithography.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.